Non-Markovian Memory Effects in GaN Semiconductor Optical Amplifiers

S. Hughes, Dept. of Physics, Washington State Univ., Pullman, Wash.

The physics of group III nitrides, like A1N and GaN, is currently coming out of its infancy and has been receiving a great deal of attention lately, primarily because of the use in short-wavelength laser diodes. Subsequently, and as a consequence of the growth technology of GaN and related devices, high-efficiency light-emitting diodes have been developed. Moreover, emission wavelengths between 390-430 nm have been observed at room temperature—the lowest ever demonstrated by a semiconductor laser.

Log in or become a member to view the full text of this article.

This article may be available for purchase via the search at Optica Publishing Group.
Optica Members get the full text of Optics & Photonics News, plus a variety of other member benefits.

Add a Comment