Feature

30 dB Contrast GaAlInAs Multiple Quantum Well Asymmetric Reflection Modulator at 1.3 µm

N. Peyghambarian, T. Ohtsuki, G. Khitrova, H.M. Gibbs, B.P. McGinnis, M.F. Krol and R. K. Boncek

High-speed optical communication interconnects and networks will require the use of high-contrast optical processing elements to fully use the bandwidth available in state-of-the-art optical fibers. Semiconductor quantum well modulators may be used for such applications. We have demonstrated an all-optical GaAlInAs/AlInAs multipe quantum well (MQW) asymmetric reflection modulator for use at 1.3 μm with an on/off contrast ratio exceeding 1000:1 and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm2, corresponding to a carrier density of 4.5X1017 cm-3. The recovery time of the modulator is measured at ~ 725 psec, indicating that the operating speed of the device approaches 1 GHz.

Publish Date: 01 December 1993