Gain Theory of Wide Gap Semiconductors

W. W. Chow, Sandia National Labs, Albuquerque, N.M., and A. Knorr and S. W. Koch, Fachbereich Physik, Philipps Universität Marburg, Marburg, Germany

Semiconductor lasers based on wide-bandgap semiconductor compounds have substantial application potential because they can provide output with wavelengths covering almost the entire optical spectrum, including the range from green/blue to ultraviolet. At present, operation of II-VI semiconductor lasers has been demonstrated at room temperature with injection current pumping. Light emitting diodes (LEDs) based on group III-nitride heterostructures are commercially available, and lasing in bulk GaN was recently achieved using optical pumping.

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