III-V-on-Silicon Integration

Dries Van Thourhout, Zhechao Wang and Günther Roelkens

Advances in integrating direct-bandgap III-V semiconductors on silicon could help drive silicon photonics forward.

figure[Getty Images]

Silicon has long offered promise as the ultimate platform for realizing compact photonic integrated circuits (PICs). That promise stems in part from the material’s properties: the high refractive-index contrast of silicon allows strong confinement of the optical field, increasing light-matter interaction in a compact space—a particularly important attribute for realizing efficient modulators and high-speed detectors. Even more important, however, silicon photonics relies on materials and processing techniques already highly developed by the silicon CMOS industry. This means it can leverage the best tools and processes available, without the need for high additional capital investments, raising the potential for high performance at low cost.

Log in or become a member to view the full text of this article.

This article may be available for purchase via the search at Optica Publishing Group.
Optica Members get the full text of Optics & Photonics News, plus a variety of other member benefits.

Add a Comment